Fraunhofer Institute for Applied Solid State Physics IAF2019
| Jahr Year | Titel/Autor:in Title/Author | Publikationstyp Publication Type |
|---|---|---|
| 2019 | Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente Manz, Christian |
Dissertation Doctoral Thesis |
| 2019 | AlGaN/GaN high electron-mobility varactors on silicon substrate Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | Integrated 2-b riemann pump RF-DAC in GaN technology for 5G base stations Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh |
Konferenzbeitrag Conference Paper |
| 2019 | A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | 190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | MBE of III-Nitride Semiconductors for Electronic Devices Aidam, Rolf; Ambacher, Oliver; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Lim, T.; Quay, Rüdiger; Waltereit, Patrick |
Aufsatz in Buch Book Article |
| 2019 | Experimental determination of Al1-xScxN thin film thermo-electro-acoustic properties up to 140°C by using SAW resonators Ding, Anli; Kurz, Nicolas; Driad, Rachid; Lu, Yuan; Lozar, Roger; Christoph, Tim; Kirste, Lutz; Ambacher, Oliver; Zukauskaite, Agne |
Konferenzbeitrag Conference Paper |
| 2019 | Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs Hodges, Jason; Albahrani, Sayed Ali; Schwantuschke, Dirk; Raay, Friedbert van; Brückner, Peter; Khandelwal, Sourabh |
Zeitschriftenaufsatz Journal Article |
| 2019 | A computationally efficient modelling methodology for field-plates in GaN HEMTs Hodges, Jason; Albahrani, Sayed Ali; Khandelwal, Sourabh |
Konferenzbeitrag Conference Paper |
| 2019 | High-Q anti-series AlGaN/GaN high electron-mobility varactor Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Meder, Dirk; Basler, Michael; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar |
Konferenzbeitrag Conference Paper |
| 2019 | Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brückner, Peter; Quay, Rüdiger; Ambacher, Oliver |
Zeitschriftenaufsatz Journal Article |
| 2019 | Comparison of MOCVD and MBE regrowth for CAVET fabrication Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei |
Zeitschriftenaufsatz Journal Article |
| 2019 | D-band and G-band high-performance GaN power amplifier MMICs Cwiklinski, Maciej; Brückner, Peter; Leone, Stefano; Friesicke, Christian; Massler, Hermann; Lozar, Roger; Wagner, Sandrine; Quay, Rüdiger; Ambacher, Oliver |
Zeitschriftenaufsatz Journal Article |
| 2019 | Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE Frei, Kathrin; Trejo-Hernández, Raúl; Schütt, Sebastian; Kirste, Lutz; Prescher, Mario; Aidam, Rolf; Müller, Stefan; Waltereit, Patrick; Ambacher, Oliver; Fiederle, Michael |
Zeitschriftenaufsatz Journal Article |
| 2019 | Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si Leone, Stefano; Benkhelifa, Fouad; Kirste, Lutz; Manz, Christian; Quay, Rüdiger; Ambacher, Oliver |
Zeitschriftenaufsatz Journal Article |
| 2019 | A pseudo-complementary GaN-based gate driver with Reduced Static Losses Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
| 2019 | Finite element analysis of SAW propagation characteristics in c-plane (0001) and a-plane (11-20) ALScN thin films Feil, Niclas M.; Kurz, Nicolas; Urban, Daniel F.; Altayara, Abdullah; Bjoern, Christian; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver |
Konferenzbeitrag Conference Paper |
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