Multi-Project Wafer Runs

Wafer Runs for transistors, integrated circuits (ICs) as well as electronic and optoelectronic devices

Based on its epitaxial and technological capabilities, Fraunhofer IAF offers (multi-project) wafer runs (MPW), entire mask processing and the realization of electronic and optoelectronic devices for external customers. Both frontside and backside processing is possible. The runs are offered regularly every four to six months.

Fraunhofer IAF has a state-of-the-art clean room for processing of cutting-edge III-V semiconductor devices with e-beam, optical stepper, and laser lithography as well as deposition and etching of various dielectrics and metals. In order to maintain and expand its excellent processing capabilities, Fraunhofer IAF invests in new equipment every year.

Technology services in high-frequency and power electronics

InGaAs HEMT technologies

50-35-20 nm InGaAs metamorphic HEMT (mHEMT)
mHEMT-on-Insulator technology (under development)
Design, fabrication, characterization and assembly of monolithic microwave integrated circuits (MMICs) for frequencies up to 700 GHz
State-of-the-art noise figure performance
Extremely high bandwidth
Multifunctional MMICs
On-chip broadband antennas
Performance enhancement with cryogenic operation

GaN-on-SiC technologies

Fabrication of HEMT devices from 0.5 μm down to 50 nm gate length
Highest output power
Frequency range up to 200 GHz
Highest power conversion efficiency
Proven reliability and robustness
Integrated passive devices

GaN-on-Si technologies

GaN-based power ICs
Half-bridges, gate drivers
On-chip sensors

Processed GaN on SiC wafer. — © Fraunhofer IAF
Processed GaN-on-SiC wafer

Transceiver MMIC of Fraunhofer IAF integrating power amplifier, switch and low-noise amplifier — © Fraunhofer IAF
Transceiver MMIC integrating power amplifier, switch and low-noise amplifier

Low-noise amplifier (mHEMT – 50 nm). — © Fraunhofer IAF
Low-noise amplifier (mHEMT – 50 nm)

Technology services in optoelectronics

GaAs and Inp based lasers

Double trench or buried het processing
- Broad area lasers
- Ridge-waveguide lasers
- Tapered lasers and amplifiers
Customized faced coating (NIR/IR) including characterization

IR and UV photodetector technologies

Mono- and bispectral detectors from MWIR (3–5 µm) up to LWIR (8–12 µm), with InAs/GaSb or InAs/InAsSb T2SL
Single-photon avalanche diodes (SPADs) based on InGaAs/InP
UV-C detector matrices in the solar-blind range below 280 nm with AlGaN

Wafer of Fraunhofer IAF caontaining detectors for short-wavelength infrared — © Fraunhofer IAF
3-inch InGaAs/InP wafer comprising APD arrays and single-element devices for use at 1550 nm wavelength

Wafer of Fraunhofer IAF containing UV detectors — © Fraunhofer IAF
UV detectors on sapphire substrate

Wafer of Fraunhofer IAF containing lasers on silicon substrate — © Fraunhofer IAF
Low-noise amplifier (mHEMT - 50 nm lowest power)