Material development

In order to realize new device concepts and to improve and extend our current devices portfolio we investigate and develop novel materials. One significant focus is the growth of high purity as well as intentionally doped single-crystalline diamond layers for use in quantum technologies: For example, as single photon sources, high-resolution magnetic field probes, as basis for spin-qubit quantum gates operating at room temperature, or for future power electronic devices. Furthermore, we concentrate on optimizing nanocrystalline diamond layers, graphene and Aluminum Scandium Nitride (AlScN) as an emerging piezoelectric material, which we also produce by metal organic chemical vapor deposition (MOCVD).

Projects highlights

IFE Targetry HUB

Fusion energy: the energy source of the future

Basic technologies for targets for laser-based inertial confinement fusion — paving the way for Germany’s first fusion power plant

AlYN

Milestone in semiconductor development

New semiconductor material: AlYN promises more energy-efficient and powerful electronics

Diamond

Project “DiLaMag”

NV-doped CVD diamond for ultra-sensitive laser threshold magnetometry

AlScN

AlScN via MOCVD

Researchers at Fraunhofer IAF have succeeded in producing AlScN via MOCVD