Power Electronics 2020 - Fraunhofer IAF

2020

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2020	Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente Manz, Christian	Dissertation Doctoral Thesis
2020	Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications Gupta, Rohit	Master Thesis
2020	A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver	Konferenzbeitrag Conference Paper
2020	Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 V GaN Power IC Koch, Dominik; Mönch, Stefan; Reiner, Richard; Hückelheim, Jan; Munoz Baron, Kevin; Waltereit, Patrick; Kallfass, Ingmar	Konferenzbeitrag Conference Paper
2020	Monolithic integration of inductive components in a GaN-on-Si technology Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver	Konferenzbeitrag Conference Paper
2020	Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs Albahrani, Sayed Ali; Heuken, Lars; Schwantuschke, Dirk; Gneiting, Thomas; Burghartz, Joachim N.; Khandelwal, Sourabh	Zeitschriftenaufsatz Journal Article
2020	Optimization of metal-organic chemical vapor deposition regrown n-GaN Leone, Stefano; Brückner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver	Zeitschriftenaufsatz Journal Article
2020	Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band Samis, Stanislav; Friesicke, Christian; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne	Konferenzbeitrag Conference Paper
2020	Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver	Konferenzbeitrag Conference Paper
2020	Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver	Zeitschriftenaufsatz Journal Article
2020	Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver	Zeitschriftenaufsatz Journal Article
2020	Metal-organic chemical vapor deposition of aluminum scandium nitride Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver	Zeitschriftenaufsatz Journal Article
2020	A phase shifter with integrated PA MMIC for Ka-Band frequencies Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas	Konferenzbeitrag Conference Paper
2020	A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver	Konferenzbeitrag Conference Paper
2020	A 600V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Hückelheim, Jan; Meder, Dirk; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar	Konferenzbeitrag Conference Paper
2020	Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (1120) thin films Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne	Zeitschriftenaufsatz Journal Article
2020	Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics Rogall, Olga; Feil, Niclas M.; Ding, Anli; Mayer, Elena; Pupyrev, Pavel D.; Lomonosov, Alexey M.; Zukauskaite, Agne; Ambacher, Oliver; Mayer, Andreas P.	Konferenzbeitrag Conference Paper
2020	Non-Polar a-plane AlScN(1120) Thin Film Based SAW Resonantors with Significantly Improved Electromechanical Coupling Ding, Anli; Driad, Rachid; Lu, Yuan; Feil, Niclas M.; Kirste, Lutz; Christoph, Tim; Ambacher, Oliver; Zukauskaite, Agne	Konferenzbeitrag Conference Paper
2020	Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver	Zeitschriftenaufsatz Journal Article
2020	A 600 V p-GaN gate HEMT with intrinsic freewheeling schottky-diode in a GaN power IC with bootstrapped driver and sensors Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar	Konferenzbeitrag Conference Paper

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Publications of the business unit Power Electronics

2020

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