Epitaxy on demand

Epitaxy

We offer specially tailored solutions in the field of III-V semiconductor epitaxy. Thanks to state-of-the-art equipment, we are able to realize pilot series production of devices for power and high frequency electronics as well as for semiconductor lasers. In this way, we create the transfer from research to industry.

In the field of wafer epitaxy you can commission the following services from us: 

• Epitaxy of customer-specific layer structures
• Epitaxy development and small series production
• Scientific advice
• Extensive characterization of the grown layer structures

• Diode lasers (GaAs 750-1080 nm, InP 1300-1700 nm and GaSb 1800-2400 nm)
• Quantum Cascade lasers
• VCSEL
• VECSEL

• IR-LED
• UV-LED

• Shortwave IR: InGaAs and extended InGaAs
  
• Mid- and longwave IR: Type-II-SL, QWIP
  
• UV Detectors

• III-V based pHEMT, mHEMT
• AIGaN HEMT on SiC and Si
• 8" wafers
• HBT