Fraunhofer Institute for Applied Solid State Physics IAF
Fraunhofer Institute for Applied Solid State Physics IAF

Modules and integrated circuits

Integrated circuits and modules up to 850 GHz
 

Fraunhofer IAFdevelops world-class high-frequency modules and integrated circuits. We offer amplifiers with extremely low noise, high gain and low power consumption. Metamorphic HEMT amplifiers set new standards: We work on devices with a noise figure of 4.8 dB at 243 GHz and on amplifiers with an operating frequency of up to 600 GHz.

In addition, Fraunhofer IAF can build functional MMICs such as single-chip radar and transceiver circuits. For use in radar systems, wireless applications and data links, GaN-HEMTs and ICs are used in power amplifiers for frequencies between 1 GHz and 200 GHz. We develop GaN packaged transistors for use in radar and mobile communications applications, with efficiencies of more than 80 percent, for frequencies up to 3 GHz and with an output power of up to 500 W.

Our devices can be used in a variety of applications:

  • Active and passive imaging systems
  • Phased array radar
  • Millimeter-wave sensors
  • Wireless communication
  • Space and earth observation
  • Broadband and space communications
© Sebastian Krause
Hybrid Integration Metamorph GaN
© Fraunhofer IAF
Hybrid Integration Metamorph GaN
Radio module for use in 5G wireless THz communication. The interdisciplinary project team of TERRANOVA investigates new system architectures for embedding broadband wireless THz connections in optical fiber lines.
© Fraunhofer IAF
Cost-effective, compact electro-optical baseband interfaces and radio modules are one of the main challenges of wireless THz connections for the next generation of mobile communications after 5G.