Fraunhofer Institute for Applied Solid State Physics IAFPerformance, Precision, Efficiency: R&D for High-Frequency Electronics and Power Electronics
At Fraunhofer IAF, researchers develop innovations in high-frequency electronics and power electronics along the III-V semiconductor value chain.
In high-frequency electronics, researchers are working on the basis of the compound semiconductors InGaAs and GaN in frequency ranges up to 1 THz and are realizing high-performance and efficient circuits, components, modules, and subsystems for applications such as fifth and sixth generation mobile communications (5G/6G), radar systems, and components for satellite communications and high-precision microwave radiometers.
In the field of power electronics, Fraunhofer IAF focuses on GaN-based devices, circuits, and modules for highest energy efficiency and maximum voltage for electromobility, air conditioning and information technology. For this purpose, Fraunofer IAF researchers develop, e.g., innovative lateral and vertical 1200 V components.