Fraunhofer Institute for Applied Solid State Physics IAF
GaN-based millimeter-wave Doherty power amplifier of Fraunhofer IAF
“ALL2GaN” aims to surpass the global state of the art in GaN-based circuits. To this end, researchers in the joint project are developing reliable low-voltage and high-voltage GaN power and high-frequency electronics as well as innovative integration technology, which will be demonstrated in a number of different use cases. The long-term goal is to improve competitiveness within the European Union to reach the forefront of industrial use of GaN-based technologies.
The objective of Fraunhofer IAF and its partners is to develop an affordable millimeter-wave GaN-on-Si technology with a novel packaging technology that enables higher performance and lower cost at the system level.
