Technologies, devices and circuits, assemblies and modules

Lateral

• AlGaN/GaN-on-Si (N-OFF, N-ON, 48 V, 650 V, 1200 V)
• AlScN/GaN-on-Si
  
• GaN-on-CMOS hetero-integration (micro-transfer printing [µTP], Wafer-to-Wafer, Si-substrate removal etc.)
• GaN-on-X (X = GaN, SiC, QST®, sapphire, diamond) 

Vertical and quasi-vertical

• GaN-on-GaN (vertical)
• GaN-on-Si (quasi-vertical)
• GaN-on-Sapphire (quasi-vertical)
• GaN-on-SiC (quasi-vertical)

Lateral devices

• HEMTs (N-OFF, N-ON, MIS | 48 V, 200 V, 650 V, 1200 V)
• HEMT with intrinsic free-wheeling diode
• High voltage cascodes
• Diodes (lateral field rectifier, Schottky diodes)

GaN power ICs

• Gate driver (multi-stage approaches, bootstrap ICs)
• Monolithic half-bridges (3-phase inverter IC)
• Current sensors (senseFET, quasi-shunt) and temperature sensors
• Protection circuits
• Control logic (PWM generator, amplifier, comparator)

All-in-GaN power ICs

• Monolithic point-of-load converter
• Active GaN diode IC

Vertical devices

• Diodes
• CAVETs and co-integrated HEMTs
• FinFETs
• MOSFETs (process development)
• JFETs and selective overgrown HEMTs (new approach for vertical GaN power ICs)

Die attach

• Solder (AuSn 80/20)
• Sinterpaste
• Adhesives (conductive, non-conductive)

Wire bonding

• Gold, copper
• Ball-wedge, wedge-wedge
• 25 µm, 50 µm etc.

PCB embedding

• Extern partner
• Si-removal (freestanding, GaN-on-PCB)

Packages for devices

• TO engineering types
• Quad flat no leads package (QFN)
• DFN8 PCB
• Dual-in-line for logic
• Flip chip (solder jetting)

Module manufacturing

• DCBs (AlN etc. | laser-structured, prototyping)