Fraunhofer Institute for Applied Solid State Physics IAF
Satellite-based networks play a key role in the transition to the fifth and sixth generation of mobile communications standards, which must be able to transmit increasing amounts of data quickly and error-free. However, more powerful high-frequency technologies are needed to tap into the millimeter-wave spectrum frequencies required for this. As part of the Magellan project, ESA has therefore commissioned Fraunhofer IAF and its partners, UMS and Tesat, to develop novel GaN transistors and high-performance amplifier circuits for satellite communication in the Ka, Q and W bands.
The transistors are to be realized using the institute’s GaN07 technology, featuring a gate length of less than 100 nm and a cut-off frequency of more than 130 GHz. The amplifiers should offer significant improvements over the current state of the art in terms of efficiency, linearity and radiation resistance. By contributing their know-how, research infrastructure, application experience and commercialization capabilities, the partners aim to enable a European value chain covering all stages from semiconductor development to end use in GEO and LEO satellite communications.