Publikationen des Geschäftsfelds Leistungselektronik

2020

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2020 Reliability characteristics of vertical pin diodes on Si and GaN substrates for high-power applications
Gupta, Rohit
Master Thesis
2020 Si-substrate removal for AlGaN/GaN devices on PCB carriers
Reiner, Richard; Gerrer, Thomas; Weiss, Beatrix; Waltereit, Patrick; Mönch, Stefan; Meder, Dirk; Sinnwell, Matthias; Dammann, Michael; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
Samis, Stanislav; Friesicke, Christian; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne
Konferenzbeitrag
Conference Paper
2020 Metal-organic chemical vapor deposition of aluminum scandium nitride
Leone, Stefano; Ligl, Jana; Manz, Christian; Kirste, Lutz; Fuchs, Theo; Menner, Hanspeter; Prescher, Mario; Wiegert, Joachim; Zukauskaite, Agne; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
Ligl, Jana; Leone, Stefano; Manz, Christian; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Prescher, Mario; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 A novel 32-Gb/s 5.6-Vpp digital-to-analog converter in 100 nm GaN technology for 5G signal generation
Weiß, Markus; Friesicke, Christian; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Optimization of metal-organic chemical vapor deposition regrown n-GaN
Leone, Stefano; Brückner, Peter; Kirste, Lutz; Doering, Philipp; Fuchs, Theodor; Müller, Stefan; Prescher, Mario; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
Kemmer, Tobias; Dammann, Michael; Baeumler, Martina; Polyakov, Vladimir M.; Brueckner, Peter; Konstanzer, Helmer; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Darstellung und Simulation von AlN/GaN-Übergitterstrukturen für elektronische Bauelemente
Manz, Christian
Dissertation
Doctoral Thesis
2020 Novel Method for Extracting Material Constants of Epitaxial Wurtzite AlScN Films on Sapphire Using Higher Order Surface Acoustic Wave Modes
Feil, Niclas M.; Mayer, Elena; Christian, Björn; Ding, Anli; Zukauskaite, Agne; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 V GaN Power IC
Koch, Dominik; Mönch, Stefan; Reiner, Richard; Hückelheim, Jan; Munoz Baron, Kevin; Waltereit, Patrick; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2020 Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics
Rogall, Olga; Feil, Niclas M.; Ding, Anli; Mayer, Elena; Pupyrev, Pavel D.; Lomonosov, Alexey M.; Zukauskaite, Agne; Ambacher, Oliver; Mayer, Andreas P.
Konferenzbeitrag
Conference Paper
2020 In-Plane Oriented Stacks of c-AlScN/Mo (110) for BAW Resonators Grown by Magnetron Sputter Epitaxy
Sundarapandian, Balasubramanian; Kessel, Matthias; Zukauskaite, Agne; Kirste, Lutz; Sun, Cheng; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 A GaN-based currrent sense amplifier for GaN HEMTs with integrated current shunts
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2020 Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N (1120) thin films
Ding, Anli; Kirste, Lutz; Lu, Yuan; Driad, Rachid; Kurz, Nicolas; Lebedev, Vadim; Christoph, Tim; Feil, Niclas M.; Lozar, Roger; Metzger, Thomas; Ambacher, Oliver; Zukauskaite, Agne
Zeitschriftenaufsatz
Journal Article
2020 Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Leone, Stefano; Fornari, Roberto; Bosi, Matteo; Montedoro, Vicenzo; Kirste, Lutz; Doering, Philipp; Benkhelifa, Fouad; Prescher, Mario; Manz, Christian; Polyakov, Vladimir M.; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2020 A phase shifter with integrated PA MMIC for Ka-Band frequencies
Neininger, Philipp; Amirpour, Raul; John, Laurenz; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
Conference Paper
2020 Extreme temperature modeling of AlGaN/GaN HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Kargazzi, Saleh; Schwantuschke, Dirk; Gneiting, Thomas; Senesky, Debbie G.; Khandelwal, Sourabh
Zeitschriftenaufsatz
Journal Article
2020 Fan-out wafer level packaging of GaN components for RF applications
Braun, Tanja; Nguyen, Thanh Duy; Voges, Steves; Wöhrmann, Markus; Gernhardt, Robert; Becker, Karl-Friedrich; Ndip, Ivan; Freimund, Damian; Schneider-Ramelow, Martin; Lang, Klaus-Dieter; Schwantuschke, Dirk; Ture, Erdin; Pretl, Michael; Engels, Sven
Konferenzbeitrag
Conference Paper
2020 Monolithic integration of inductive components in a GaN-on-Si technology
Basler, Michael; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica