Publikationen des Geschäftsfelds Leistungselektronik

2021

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2021 Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications
Döring, Philipp Maximilian
Dissertation
Doctoral Thesis
2021 Growth and fabrication of quasivertical current aperture vertical electron transistor structures
Doering, Philipp; Driad, Rachid; Leone, Stefano; Müller, Stefan; Waltereit, Patrick; Kirste, Lutz; Polyakov, Vladimir M.; Mikulla, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2021 Harmonic-Injection Class-EM/Fn Power Amplifier With Finite DC-Feed Inductance and Isolation Circuit
Mugisho, M.S.; Thian, M.; Piacibello, A.; Camarchia, V.; Quay, Rüdiger
Zeitschriftenaufsatz
Journal Article
2021 Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography
Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michael
Zeitschriftenaufsatz
Journal Article
2021 Stability and residual stresses of sputtered wurtzite AlScN thin films
Österlund, Elmeri; Ross, Glenn; Caro, Miguel; Paulasto-Kröckel, Mervi; Hollmann, Andreas; Klaus, Manuela; Meixner, Matthias; Genzel, Christoph; Koppinen, Panu; Pensala, Tuomas; Zukauskaite, Agne; Trebala, Michael
Zeitschriftenaufsatz
Journal Article
2021 First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N
Urban, D.F.; Ambacher, Oliver; Elsässer, C.
Zeitschriftenaufsatz
Journal Article
2021 Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications
Reiner, Richard; Benkhelifa, Fouad; Mönch, Stefan; Basler, Michael; Waltereit, Patrick; Mikulla, Michael; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2021 Reliability and failure analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
Dammann, Michael; Baeumler, Martina; Kemmer, Tobias; Konstanzer, Helmer; Brueckner, Peter; Krause, Sebastian; Graff, Andreas; Simon-Najasek, Michél
Konferenzbeitrag
Conference Paper
2021 Power Combining Solutions for High-Power GaN MMICs at mm-Wave Frequencies
Neininger, Philipp
Dissertation
Doctoral Thesis
2021 Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors
Sinnwell, Matthias; Doering, Philipp; Driad, Rachid; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2021 Investigation of GaN-on-Si and GaN-on-SOI substrate capacitances for discrete and monolithic half-bridges
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2021 Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN
Wolff, Niklas; Fichter, Simon; Haas, Benedikt; Islam, Md Redwanul; Niekiel, Florian; Kessel, Maximilian; Ambacher, Oliver; Koch, Christoph; Wagner, Bernhard; Lofink, Fabian; Kienle, Lorenz
Zeitschriftenaufsatz
Journal Article
2021 Characteristics of hetero-integrated GaN-HEMTs on CMOS technology by micro-transfer-printing
Reiner, Richard; Lerner, Ralf; Waltereit, Patrick; Hansen, Nis Hauke; Mönch, Stefan; Fecioru, Alin; Gomez, David
Konferenzbeitrag
Conference Paper
2021 Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2021 Surface Acoustic Wave Devices based on c-plane and a-plane AlscN
Ding, Anli
Dissertation
Doctoral Thesis
2021 Reliability and Degradation Mechanisms of GaN High Electron Mobility Transistors with Short Gate Length
Kemmer, Tobias
Dissertation
Doctoral Thesis
2021 A 28-90-GHz GaN Power Amplifier MMIC Using an Integrated fT-Doubler Topology
Cwiklinski, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Raay, Friedbert van; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2021 Wurtzite ScAlN, InAlN and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties
Ambacher, O.; Christian, B.; Feil, N.; Urban, D.F.; Elsässer, C.; Prescher, M.; Kirste, L.
Zeitschriftenaufsatz
Journal Article
2021 Building Blocks for GaN Power Integration
Basler, Michael; Reiner, Richard; Mönch, Stefan; Benkhelifa, Fouad; Doering, Philipp; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2021 Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
Ambacher, Oliver; Christian, B.; Yassine, Mohamed; Baeumler, Martina; Leone, Stefano; Quay, Rüdiger
Zeitschriftenaufsatz
Journal Article
2021 Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC
Neininger, Philipp; John, Laurenz; Thome, Fabian; Friesicke, Christian; Brückner, Peter; Quay, Rüdiger; Zwick, Thomas
Zeitschriftenaufsatz
Journal Article
2021 On the exceptional temperature stability of ferroelectric Al1-xScxN thin films
Islam, M.R.; Wolff, N.; Yassine, M.; Schönweger, G.; Christian, B.; Kohlstedt, H.; Ambacher, O.; Lofink, F.; Kienle, L.; Fichtner, S.
Zeitschriftenaufsatz
Journal Article
2021 Metal organic chemical vapour deposition regrown large area GaN-on-GaN current aperture vertical electron transistors with high current capability
Doering, Philipp; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Mikulla, Michael
Zeitschriftenaufsatz
Journal Article
2021 High-power density DC-DC converters using highly-integrated half-bridge GaN ICs
Basler, Michael; Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Quay, Rüdiger; Ambacher, Oliver; Weidinger, Gerald; Weis, Gerald; Kallfass, Ingmar
Konferenzbeitrag
Conference Paper
2021 A GaN-based active diode circuit for low-loss rectification
Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver
Konferenzbeitrag
Conference Paper
2021 Technology of GaN-Based Large Area CAVETs with Co-Integrated HEMTs
Döring, P.; Driad, Rachid; Reiner, Richard; Waltereit, Patrick; Leone, Stefano; Mikulla, Michael; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2021 Monolithic integrated AlGaN/GaN power converter topologies on high-voltage AlN/GaN superlattice buffer
Mönch, Stefan; Müller, Stefan; Reiner, Richard; Waltereit, Patrick; Czap, Heiko; Basler, Michael; Hückelheim, Jan; Kirste, Lutz; Kallfass, Ingmar; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
2021 Switching Characteristics of Integrated GaN-on-Si Half-Bridge and Driver Circuits
Mönch, Stefan
Dissertation
Doctoral Thesis
2021 A three-phase GaN-on-Si inverter IC for low-voltage motor drives
Mönch, Stefan; Reiner, Richard; Benkhelifa, Fouad; Basler, Michael; Waltereit, Patrick; Quay, Rüdiger
Konferenzbeitrag
Conference Paper
2021 PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Benkhelifa, Fouad; Hückelmheim, Jan; Meder, Dirk; Zink, Martin; Kaden, Thomas; Noll, Stefan; Mansfeld, Sebastian; Mingirulli, Nicola; Quay, Rüdiger; Kallfass, Ingmar
Zeitschriftenaufsatz
Journal Article
2021 Properties of higher-order surface acoustic wave modes in Al1-xScxN/sapphire structures
Feil, Niclas M.; Mayer, Elena; Nair, Akash; Christian, Björn; Ding, Anli; Sun, Cheng; Mihalic, Saskia Sirrah; Kessel, Maximilian; Zukauskaite, Agne; Ambacher, Oliver
Zeitschriftenaufsatz
Journal Article
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica